Mr. Vasileios Manouras , Nationa Technical University of Athens, Greece
Vasileios Manouras is a senior Analog/RF IC design engineer and a PhD candidate in Electrical and Computer Engineering at the National Technical University of Athens, Greece. His expertise lies in designing RF and mm-wave power amplifiers, transceivers, and high-frequency circuits. He has contributed to cutting-edge research in silicon technologies, working on D-Band and G-Band transceivers, mm-wave PAs, LNAs, and frequency multipliers. His industry experience includes an internship at Infineon Technologies AG, where he designed an Inverse Class F switch-mode power amplifier. Recognized for his contributions, he was awarded the prestigious “IPCEI on Microelectronics Scholarship” by Infineon. His work significantly impacts wireless and wireline data links, making him a leading researcher in high-frequency IC design.
🌍 Professional Profile:
Orcid
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🏆 Suitability for the Best Researcher Award
Vasileios Manouras is an exceptional researcher in RF and mm-wave integrated circuits, demonstrating innovation and technical excellence. His PhD research on sub-THz transceivers addresses the increasing demand for high-speed wireless communication, positioning him at the forefront of next-generation IC design. His expertise spans circuit design, PCB development, and system integration, contributing to projects in D-Band (110-170 GHz) and G-Band (175-225 GHz). He has successfully collaborated with academia and industry, receiving the prestigious “IPCEI on Microelectronics Scholarship” from Infineon Technologies. His outstanding contributions, technical skills, and dedication to advancing high-frequency electronics make him a strong candidate for the Best Researcher Award.
🎓 Education
Vasileios Manouras holds a Diploma in Electrical and Computer Engineering from the National Technical University of Athens (NTUA), specializing in Microelectronics. His academic excellence and research aptitude have led him to pursue a PhD in Electrical and Computer Engineering at NTUA, focusing on the design of integrated transceivers for sub-THz applications. Throughout his studies, he has acquired extensive knowledge in analog, RF, and mm-wave circuit design, as well as experience with cutting-edge simulation and measurement tools. His academic journey has been enriched by hands-on experience with silicon-based IC design and high-frequency PCB development, equipping him with the expertise to drive innovation in RF and mm-wave communication systems.
🏢 Work Experience
Vasileios Manouras has extensive experience in RF and mm-wave IC design. As a PhD candidate at NTUA since 2020, he has contributed to the development of high-frequency transceivers, including D-Band and G-Band systems, 300-GHz transmitters, power amplifiers, LNAs, and frequency multipliers. His research integrates advanced silicon technologies, contributing to next-generation wireless communication. During his internship at Infineon Technologies AG (2019-2020), he designed an Inverse Class F switch-mode power amplifier operating at 28 GHz using BiCMOS 0.13µm technology. His expertise extends to PCB design for high-frequency applications, signal integrity analysis, and RF characterization, making him a key contributor to state-of-the-art IC development for high-speed data transmission.
🏅 Awards and Honors
Vasileios Manouras has received significant recognition for his research excellence in RF and mm-wave IC design. He was awarded the prestigious “IPCEI on Microelectronics Scholarship” by Infineon Technologies AG, acknowledging his outstanding contributions to microelectronics research. His academic and professional achievements in designing high-frequency circuits have been instrumental in advancing communication technologies. His work in silicon-based RF transceivers and power amplifiers has been recognized in both academia and industry, earning him opportunities to collaborate on cutting-edge projects. His dedication to innovation and technical excellence has positioned him as a distinguished researcher, making him a deserving candidate for honors and awards in the field of analog/RF IC design.
🔬 Research Focus
Vasileios Manouras specializes in RF and mm-wave IC design, focusing on developing high-frequency transceivers for sub-THz applications. His research explores the design of power-efficient, high-performance RF circuits, including power amplifiers (PAs), low-noise amplifiers (LNAs), mixers, and frequency multipliers. He has worked on D-Band (110-170 GHz) and G-Band (175-225 GHz) transceivers, as well as a 300-GHz transmitter front-end. His work addresses the growing demand for high-data-rate wireless and wireline communication, optimizing circuit architectures for next-generation communication standards. His expertise in silicon-based technologies, PCB design, and RF measurements contributes to advancements in 5G, 6G, and beyond, ensuring efficient and scalable solutions for future telecommunication networks.
📊 Publication Top Notes:
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Manouras, V., & Papananos, Y. (2025). A 28-GHz Highly Efficient Class-J SiGe Power Amplifier with Pi-Type Load Network Integration. VLSI Journal. DOI: 10.1016/j.vlsi.2025.102415
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Korres, A., Manouras, V., & Papananos, Y. (2024). A 300-GHz Broadband On-Chip Antenna Integrated With a Transmitter Front-End. 2024 International Conference on Electromagnetics in Advanced Applications (ICEAA). DOI: 10.1109/iceaa61917.2024.10701621
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Manouras, V., & Papananos, Y. (2024). A G-Band ASK Transceiver for Short-Range Communications in 130 nm SiGe BiCMOS. 2024 19th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME). DOI: 10.1109/prime61930.2024.10559691
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Manouras, V., & Papananos, I. (2023). A Ka-Band SiGe BiCMOS Quasi-F−1 Power Amplifier Using a Parasitic Capacitance Cancellation Technique. Journal of Low Power Electronics and Applications, 13(2), 23. DOI: 10.3390/jlpea13020023
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Manouras, V., & Papananos, I. (2022). A Ka-Band Quasi-F⁻¹ Power Amplifier in a 130 nm SiGe BiCMOS Technology. 2022 Panhellenic Conference on Electronics & Telecommunications (PACET).
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Soumpasakou, F., Manouras, V., & Papananos, I. (2022). Design and Implementation of a D-Band I/Q Modulator in a 130 nm SiGe BiCMOS Technology. 2022 Panhellenic Conference on Electronics & Telecommunications (PACET).