Hemendra Kumar Pandey | Electronics Engineering | Best Researcher Award

Published on by Engineering Scientist

Dr. Hemendra Kumar
Pandey | Electronics Engineering
| Best Researcher Award

Scientific Officer at Homi Bhabha National Institute (HBNI), Department of Atomic Energy (DAE), India.

Dr. Hemendra Kumar Pandey is a senior RF and accelerator systems expert serving as Scientific Officer-G at VECC, Department of Atomic Energy, and Associate Professor at HBNI. With over two decades of experience, he has played a pivotal role in the development of the Radioactive Ion Beam Facility in Kolkata. He holds a Ph.D. from IIT Kharagpur, and M.Tech and B.Tech degrees from the University of Allahabad. His research spans RF systems for particle accelerators, high-power amplifier design, beam diagnostics, and radiation-hardened circuits. Dr. Pandey has authored over 100 publications and is an active member of professional and ethical committees. His work significantly contributes to India’s advanced nuclear physics infrastructure and technology innovation in accelerator science.

🌍 Professional Profile:

Google Scholar 

ORCID

🏆 Suitability for the Best Researcher Award :

Dr. Hemendra Kumar Pandey is a highly suitable candidate for the Best Researcher Award due to his impactful contributions in the field of particle accelerator technologies and RF system design. His long-standing commitment to national scientific development through his work on the Radioactive Ion Beam facility at VECC demonstrates leadership, innovation, and excellence. With over 113 publications and active involvement in research, peer review, and academic mentorship, Dr. Pandey has made significant strides in RF engineering and radiation-hardened electronics. His role in developing indigenous technology for societal and industrial applications showcases applied research at its finest. His multidisciplinary expertise and dedication to scientific advancement make him an exemplary researcher worthy of this honor.

🎓 Education :

Dr. Hemendra Kumar Pandey has a strong academic foundation in electronics and RF systems. He earned his Ph.D. from the prestigious Indian Institute of Technology (IIT) Kharagpur, specializing in RF and microwave systems for particle accelerators. He completed his Master of Technology (M.Tech) in Electronics and his Bachelor of Technology (B.Tech) in Electronics & Telecommunication from the University of Allahabad, Prayagraj. His academic trajectory reflects a consistent focus on high-frequency electronics, amplifier design, and system-level integration, equipping him with the advanced knowledge required to tackle the challenges in nuclear science and accelerator technology. Dr. Pandey’s educational background serves as the cornerstone of his innovations in high-power RF systems and radiation-hardened integrated circuit design.

🏢 Work Experience :

Dr. Pandey joined the Department of Atomic Energy through BARC Training School in 1999 and has since built a distinguished career at VECC, Kolkata. Starting as a Scientific Officer-C in 2000, he progressed through the ranks to his current role as Scientific Officer-G. His core responsibilities include RF system design, high-power amplifier development, ion source integration, and beam diagnostics for linear accelerators. He has over two decades of experience contributing to one of India’s major research infrastructures—the Radioactive Ion Beam Facility. Additionally, he holds an Associate Professorship at Homi Bhabha National Institute. His practical leadership spans R&D, education, and national-level research missions, with consistent involvement in technological innovation and scientific mentorship.

🏅 Awards and Honors :

Dr. Hemendra Kumar Pandey’s professional excellence has earned him widespread recognition. He is a Fellow of the Institution of Electronics and Telecommunication Engineers (IETE) and an active member of key scientific bodies such as the Indian Society of Particle Accelerator (ISPA) and Hindi Vigyan Sahitya Parishad. He has been a member of the Institutional Ethical Committee of NIOH under the Ministry of AYUSH. He frequently serves as a Ph.D. and M.Tech thesis evaluator for reputed institutions and is a reviewer for high-impact journals like the Review of Scientific Instruments. His accolades underscore his commitment to scientific rigor, ethical research practices, and mentorship, further solidifying his leadership and influence in the field of nuclear instrumentation and accelerator research.

🔬 Research Focus :

Dr. Pandey’s research focuses on the design and development of RF systems for particle accelerators, high-power RF amplifiers, beam diagnostics, and radiation-hardened mixed-signal RF ICs. His pivotal role in the Radioactive Ion Beam Facility at VECC involves delivering high-precision RF engineering solutions for accelerating short-lived isotopes—crucial for nuclear physics and material science. He has also contributed to developing novel diagnostics tools, ion source control systems, and radiation-resilient electronics. His research bridges fundamental physics and practical technology applications, enabling advances in both science and society. By addressing the complexities of RF behavior under high-energy environments, his work fosters innovation in accelerator technology, supporting India’s leadership in nuclear science and allied interdisciplinary domains.

📊 Publication Top Notes:

📘 The design of a four‑rod RFQ LINAC for VEC‑RIB facility
📅 2004 | 🔢 Cited by: 21 🧲🛠️ ispa.co.in+6researchgate.net+6scholar.google.co.in+6

📘 Design and development of a radio frequency quadrupole linac post‑accelerator for the Variable Energy Cyclotron Center rare ion beam project
📅 2010 | 🔢 Cited by: 19 ⚙️🔬 vecc.gov.in+3researchgate.net+3scholar.google.co.in+3

📘 Design of LINAC post‑accelerator for VECC RIB facility using realistic field
📅 2006 | 🔢 Cited by: 16 💡🔧 scholar.google.co.in

📘 33.7 MHz heavy‑ion radio frequency quadrupole linac at VECC Kolkata
📅 2007 | 🔢 Cited by: 15 📡🔭 researchgate.net+15researchgate.net+15scholar.google.co.in+15

📘 Improvement in phase‑sensitivity of a Mach–Zehnder interferometer with the superposition …
📅 2023 | 🔢 Cited by: 13 ⚛️🔍 arxiv.org+6scholar.google.co.in+6en.wikipedia.org+6

📘 Design of a “two‑ion source” Charge Breeder using ECR ion source in two frequency mode
📅 2005 | 🔢 Cited by: 13 🧩🚀 vecc.gov.in+2scholar.google.co.in+2colab.ws+2

📘 Design of a gas‑jet coupled ECR ion‑source for ISOL type RIB facility
📅 2020 | 🔢 Cited by: 1 🌬️⚗️ ui.adsabs.harvard.edu+15colab.ws+15vecc.gov.in+15

Vasileios Manouras | RF IC Design | Best Researcher Award

Published on by Engineering Scientist

Mr. Vasileios Manouras| RF IC Design
| Best Researcher Award

Mr. Vasileios Manouras , Nationa Technical University of Athens, Greece

Vasileios Manouras is a senior Analog/RF IC design engineer and a PhD candidate in Electrical and Computer Engineering at the National Technical University of Athens, Greece. His expertise lies in designing RF and mm-wave power amplifiers, transceivers, and high-frequency circuits. He has contributed to cutting-edge research in silicon technologies, working on D-Band and G-Band transceivers, mm-wave PAs, LNAs, and frequency multipliers. His industry experience includes an internship at Infineon Technologies AG, where he designed an Inverse Class F switch-mode power amplifier. Recognized for his contributions, he was awarded the prestigious “IPCEI on Microelectronics Scholarship” by Infineon. His work significantly impacts wireless and wireline data links, making him a leading researcher in high-frequency IC design.

🌍 Professional Profile:

Orcid

Scopus

🏆 Suitability for the Best Researcher Award 

Vasileios Manouras is an exceptional researcher in RF and mm-wave integrated circuits, demonstrating innovation and technical excellence. His PhD research on sub-THz transceivers addresses the increasing demand for high-speed wireless communication, positioning him at the forefront of next-generation IC design. His expertise spans circuit design, PCB development, and system integration, contributing to projects in D-Band (110-170 GHz) and G-Band (175-225 GHz). He has successfully collaborated with academia and industry, receiving the prestigious “IPCEI on Microelectronics Scholarship” from Infineon Technologies. His outstanding contributions, technical skills, and dedication to advancing high-frequency electronics make him a strong candidate for the Best Researcher Award.

🎓 Education 

Vasileios Manouras holds a Diploma in Electrical and Computer Engineering from the National Technical University of Athens (NTUA), specializing in Microelectronics. His academic excellence and research aptitude have led him to pursue a PhD in Electrical and Computer Engineering at NTUA, focusing on the design of integrated transceivers for sub-THz applications. Throughout his studies, he has acquired extensive knowledge in analog, RF, and mm-wave circuit design, as well as experience with cutting-edge simulation and measurement tools. His academic journey has been enriched by hands-on experience with silicon-based IC design and high-frequency PCB development, equipping him with the expertise to drive innovation in RF and mm-wave communication systems.

🏢 Work Experience 

Vasileios Manouras has extensive experience in RF and mm-wave IC design. As a PhD candidate at NTUA since 2020, he has contributed to the development of high-frequency transceivers, including D-Band and G-Band systems, 300-GHz transmitters, power amplifiers, LNAs, and frequency multipliers. His research integrates advanced silicon technologies, contributing to next-generation wireless communication. During his internship at Infineon Technologies AG (2019-2020), he designed an Inverse Class F switch-mode power amplifier operating at 28 GHz using BiCMOS 0.13µm technology. His expertise extends to PCB design for high-frequency applications, signal integrity analysis, and RF characterization, making him a key contributor to state-of-the-art IC development for high-speed data transmission.

🏅 Awards and Honors 

Vasileios Manouras has received significant recognition for his research excellence in RF and mm-wave IC design. He was awarded the prestigious “IPCEI on Microelectronics Scholarship” by Infineon Technologies AG, acknowledging his outstanding contributions to microelectronics research. His academic and professional achievements in designing high-frequency circuits have been instrumental in advancing communication technologies. His work in silicon-based RF transceivers and power amplifiers has been recognized in both academia and industry, earning him opportunities to collaborate on cutting-edge projects. His dedication to innovation and technical excellence has positioned him as a distinguished researcher, making him a deserving candidate for honors and awards in the field of analog/RF IC design.

🔬 Research Focus 

Vasileios Manouras specializes in RF and mm-wave IC design, focusing on developing high-frequency transceivers for sub-THz applications. His research explores the design of power-efficient, high-performance RF circuits, including power amplifiers (PAs), low-noise amplifiers (LNAs), mixers, and frequency multipliers. He has worked on D-Band (110-170 GHz) and G-Band (175-225 GHz) transceivers, as well as a 300-GHz transmitter front-end. His work addresses the growing demand for high-data-rate wireless and wireline communication, optimizing circuit architectures for next-generation communication standards. His expertise in silicon-based technologies, PCB design, and RF measurements contributes to advancements in 5G, 6G, and beyond, ensuring efficient and scalable solutions for future telecommunication networks.

📊 Publication Top Notes:

  • Manouras, V., & Papananos, Y. (2025). A 28-GHz Highly Efficient Class-J SiGe Power Amplifier with Pi-Type Load Network Integration. VLSI Journal. DOI: 10.1016/j.vlsi.2025.102415

  • Korres, A., Manouras, V., & Papananos, Y. (2024). A 300-GHz Broadband On-Chip Antenna Integrated With a Transmitter Front-End. 2024 International Conference on Electromagnetics in Advanced Applications (ICEAA). DOI: 10.1109/iceaa61917.2024.10701621

  • Manouras, V., & Papananos, Y. (2024). A G-Band ASK Transceiver for Short-Range Communications in 130 nm SiGe BiCMOS. 2024 19th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME). DOI: 10.1109/prime61930.2024.10559691

  • Manouras, V., & Papananos, I. (2023). A Ka-Band SiGe BiCMOS Quasi-F−1 Power Amplifier Using a Parasitic Capacitance Cancellation Technique. Journal of Low Power Electronics and Applications, 13(2), 23. DOI: 10.3390/jlpea13020023

  • Manouras, V., & Papananos, I. (2022). A Ka-Band Quasi-F⁻¹ Power Amplifier in a 130 nm SiGe BiCMOS Technology. 2022 Panhellenic Conference on Electronics & Telecommunications (PACET).

  • Soumpasakou, F., Manouras, V., & Papananos, I. (2022). Design and Implementation of a D-Band I/Q Modulator in a 130 nm SiGe BiCMOS Technology. 2022 Panhellenic Conference on Electronics & Telecommunications (PACET).