Hemendra Kumar Pandey | Electronics Engineering | Best Researcher Award

Published on by Engineering Scientist

Dr. Hemendra Kumar
Pandey | Electronics Engineering
| Best Researcher Award

Scientific Officer at Homi Bhabha National Institute (HBNI), Department of Atomic Energy (DAE), India.

Dr. Hemendra Kumar Pandey is a senior RF and accelerator systems expert serving as Scientific Officer-G at VECC, Department of Atomic Energy, and Associate Professor at HBNI. With over two decades of experience, he has played a pivotal role in the development of the Radioactive Ion Beam Facility in Kolkata. He holds a Ph.D. from IIT Kharagpur, and M.Tech and B.Tech degrees from the University of Allahabad. His research spans RF systems for particle accelerators, high-power amplifier design, beam diagnostics, and radiation-hardened circuits. Dr. Pandey has authored over 100 publications and is an active member of professional and ethical committees. His work significantly contributes to India’s advanced nuclear physics infrastructure and technology innovation in accelerator science.

🌍 Professional Profile:

Google Scholar 

ORCID

🏆 Suitability for the Best Researcher Award :

Dr. Hemendra Kumar Pandey is a highly suitable candidate for the Best Researcher Award due to his impactful contributions in the field of particle accelerator technologies and RF system design. His long-standing commitment to national scientific development through his work on the Radioactive Ion Beam facility at VECC demonstrates leadership, innovation, and excellence. With over 113 publications and active involvement in research, peer review, and academic mentorship, Dr. Pandey has made significant strides in RF engineering and radiation-hardened electronics. His role in developing indigenous technology for societal and industrial applications showcases applied research at its finest. His multidisciplinary expertise and dedication to scientific advancement make him an exemplary researcher worthy of this honor.

🎓 Education :

Dr. Hemendra Kumar Pandey has a strong academic foundation in electronics and RF systems. He earned his Ph.D. from the prestigious Indian Institute of Technology (IIT) Kharagpur, specializing in RF and microwave systems for particle accelerators. He completed his Master of Technology (M.Tech) in Electronics and his Bachelor of Technology (B.Tech) in Electronics & Telecommunication from the University of Allahabad, Prayagraj. His academic trajectory reflects a consistent focus on high-frequency electronics, amplifier design, and system-level integration, equipping him with the advanced knowledge required to tackle the challenges in nuclear science and accelerator technology. Dr. Pandey’s educational background serves as the cornerstone of his innovations in high-power RF systems and radiation-hardened integrated circuit design.

🏢 Work Experience :

Dr. Pandey joined the Department of Atomic Energy through BARC Training School in 1999 and has since built a distinguished career at VECC, Kolkata. Starting as a Scientific Officer-C in 2000, he progressed through the ranks to his current role as Scientific Officer-G. His core responsibilities include RF system design, high-power amplifier development, ion source integration, and beam diagnostics for linear accelerators. He has over two decades of experience contributing to one of India’s major research infrastructures—the Radioactive Ion Beam Facility. Additionally, he holds an Associate Professorship at Homi Bhabha National Institute. His practical leadership spans R&D, education, and national-level research missions, with consistent involvement in technological innovation and scientific mentorship.

🏅 Awards and Honors :

Dr. Hemendra Kumar Pandey’s professional excellence has earned him widespread recognition. He is a Fellow of the Institution of Electronics and Telecommunication Engineers (IETE) and an active member of key scientific bodies such as the Indian Society of Particle Accelerator (ISPA) and Hindi Vigyan Sahitya Parishad. He has been a member of the Institutional Ethical Committee of NIOH under the Ministry of AYUSH. He frequently serves as a Ph.D. and M.Tech thesis evaluator for reputed institutions and is a reviewer for high-impact journals like the Review of Scientific Instruments. His accolades underscore his commitment to scientific rigor, ethical research practices, and mentorship, further solidifying his leadership and influence in the field of nuclear instrumentation and accelerator research.

🔬 Research Focus :

Dr. Pandey’s research focuses on the design and development of RF systems for particle accelerators, high-power RF amplifiers, beam diagnostics, and radiation-hardened mixed-signal RF ICs. His pivotal role in the Radioactive Ion Beam Facility at VECC involves delivering high-precision RF engineering solutions for accelerating short-lived isotopes—crucial for nuclear physics and material science. He has also contributed to developing novel diagnostics tools, ion source control systems, and radiation-resilient electronics. His research bridges fundamental physics and practical technology applications, enabling advances in both science and society. By addressing the complexities of RF behavior under high-energy environments, his work fosters innovation in accelerator technology, supporting India’s leadership in nuclear science and allied interdisciplinary domains.

📊 Publication Top Notes:

📘 The design of a four‑rod RFQ LINAC for VEC‑RIB facility
📅 2004 | 🔢 Cited by: 21 🧲🛠️ ispa.co.in+6researchgate.net+6scholar.google.co.in+6

📘 Design and development of a radio frequency quadrupole linac post‑accelerator for the Variable Energy Cyclotron Center rare ion beam project
📅 2010 | 🔢 Cited by: 19 ⚙️🔬 vecc.gov.in+3researchgate.net+3scholar.google.co.in+3

📘 Design of LINAC post‑accelerator for VECC RIB facility using realistic field
📅 2006 | 🔢 Cited by: 16 💡🔧 scholar.google.co.in

📘 33.7 MHz heavy‑ion radio frequency quadrupole linac at VECC Kolkata
📅 2007 | 🔢 Cited by: 15 📡🔭 researchgate.net+15researchgate.net+15scholar.google.co.in+15

📘 Improvement in phase‑sensitivity of a Mach–Zehnder interferometer with the superposition …
📅 2023 | 🔢 Cited by: 13 ⚛️🔍 arxiv.org+6scholar.google.co.in+6en.wikipedia.org+6

📘 Design of a “two‑ion source” Charge Breeder using ECR ion source in two frequency mode
📅 2005 | 🔢 Cited by: 13 🧩🚀 vecc.gov.in+2scholar.google.co.in+2colab.ws+2

📘 Design of a gas‑jet coupled ECR ion‑source for ISOL type RIB facility
📅 2020 | 🔢 Cited by: 1 🌬️⚗️ ui.adsabs.harvard.edu+15colab.ws+15vecc.gov.in+15

jaehyeong lee | Electronics Engineering | Best Researcher Award

Published on by Engineering Scientist

Dr. jaehyeong lee |Electronics Engineering
| Best Researcher Award

Staff engineer at  samsung electronics, South Korea .

Jaehyeong Lee is a dedicated researcher and Staff Engineer at Samsung Electronics, specializing in DRAM BEOL reliability. With a Ph.D. in Materials Engineering, his research focuses on electromigration (EM) and time-dependent dielectric breakdown (TDDB) characteristics in BEOL processes. His work has led to significant insights into the effects of mechanical stress on BEOL TDDB, contributing to the development of a clustering model for enhanced reliability. He has published seven SCI-indexed papers and received the Excellent Poster Award at HyMaP 2017. His commitment to advancing semiconductor reliability through innovative research makes him a strong candidate for the Best Researcher Award.

🌍 Professional Profile:

Scopus 

🏆 Suitability for the Best Researcher Award

Jaehyeong Lee’s research on DRAM BEOL reliability addresses critical challenges in semiconductor manufacturing. His studies on electromigration and TDDB have contributed to improving BEOL process reliability in advanced DRAM technology. His expertise in understanding mechanical stress effects on TDDB has led to innovative approaches in clustering models. With seven SCI-indexed publications, he has demonstrated significant contributions to the field. His award-winning research (Excellent Poster Award, HyMaP 2017) and ongoing investigations into process improvements showcase his dedication. As a researcher tackling industry-relevant challenges with impactful solutions, he is well-qualified for the Best Researcher Award.

🎓 Education 

Jaehyeong Lee holds a Ph.D. in Materials Engineering, which laid the foundation for his expertise in semiconductor reliability. His doctoral research focused on DRAM BEOL reliability, particularly in electromigration (EM) and time-dependent dielectric breakdown (TDDB) mechanisms. His academic background equipped him with advanced knowledge of materials behavior under extreme scaling conditions, which he applies to his current work at Samsung Electronics. Through his rigorous academic training and specialization in BEOL reliability, he has contributed valuable insights into semiconductor technology. His education has been instrumental in his ability to develop innovative solutions that enhance the longevity and performance of DRAM products.

🏢 Work Experience 

Jaehyeong Lee is currently a Staff Engineer at Samsung Electronics, where he researches DRAM BEOL reliability. His experience includes analyzing BEOL manufacturing processes and their effects on electromigration (EM) and TDDB characteristics. He has contributed to the semiconductor industry by investigating mechanical stress factors affecting BEOL TDDB and developing a clustering model to improve reliability. With a strong research background and practical expertise in semiconductor reliability, he has played a pivotal role in addressing key challenges in DRAM technology. His seven published SCI-indexed papers reflect his commitment to advancing BEOL process understanding and reliability. His professional journey highlights his contributions to the innovation and development of high-performance memory devices.

🏅 Awards and Honors 

Jaehyeong Lee’s research excellence has been recognized with the Excellent Poster Award at HyMaP 2017, highlighting his contributions to materials engineering and semiconductor reliability. His seven SCI-indexed publications demonstrate his impact in the field of DRAM BEOL reliability. His research findings on electromigration and TDDB have gained recognition in the scientific community, influencing advancements in semiconductor process improvements. His innovative approach to clustering models for mechanical stress effects on TDDB showcases his ability to contribute groundbreaking insights. With a focus on improving semiconductor reliability, his research achievements, academic rigor, and industry contributions make him a deserving candidate for further accolades and recognition in the field.

🔬 Research Focus 

Jaehyeong Lee’s research focuses on the degradation characteristics of BEOL reliability in DRAM technology. His work addresses the impact of electromigration (EM) and time-dependent dielectric breakdown (TDDB) on BEOL process reliability. His recent studies on mechanical stress effects on BEOL TDDB aim to improve the stability and efficiency of semiconductor devices. He has also developed a clustering model to analyze and predict TDDB behavior under different manufacturing conditions. His research contributes to overcoming the challenges posed by rapid DRAM scaling. By enhancing BEOL reliability, he plays a crucial role in improving semiconductor performance and longevity, making his research valuable to the advancement of memory technologies.

📊 Publication Top Notes:

Lee, J., Jihyun, B., Woo, B., Byoung-wook, Y. M., Lee, Y. M., Ko, S., Seungbum, & Pae, S., Sangwoo. (2025). Vertical scale-down of Cu/low-k interconnect development for BEOL reliability improvement of 12nm DRAM. Microelectronics Reliability.