Govind Kumar Mishra | Electronics Engineering | Best Researcher Award

Published on by Engineering Scientist

Mr. Govind Kumar Mishra | Electronics Engineering
| Best Researcher Award

PhD Scholar at Indian Institute of Technology, Roorkee, India.

Govind Kumar Mishra is a dedicated researcher in RF and Microwave Engineering, currently pursuing his Ph.D. at IIT Roorkee. With a strong foundation in electronics and communication, he specializes in Substrate Integrated Waveguide (SIW) filter design for 5G and microwave applications. He has published multiple research papers and actively works on the development and simulation of advanced microwave devices using software such as HFSS, CST, and ADS. Govind has industry exposure from Sky Voice Telecom and academic experience as a GATE/IES tutor. He is a multi-time GATE qualifier and has received fellowships during both M.Tech and Ph.D. His commitment to high-frequency device innovation and his technical acumen make him a rising expert in his domain.

🌍 Professional Profile:

Google Scholar 

🏆 Suitability for the Best Researcher Award :

Govind Kumar Mishra is highly suitable for the Best Researcher Award due to his focused contributions in RF and Microwave device development, especially in SIW filter design for emerging 5G systems. His ongoing research at IIT Roorkee reflects originality, technical depth, and strong relevance to next-generation wireless technology. He has consistently demonstrated excellence through GATE qualifications, academic fellowships, and advanced simulations in real-world applications. His interdisciplinary expertise combines theory, simulation, and practical considerations in microwave filter technology. Govind’s proactive approach, supported by recognized academic achievements and innovative solutions for modern communication systems, makes him a strong candidate for this prestigious recognition.

🎓 Education :

Govind holds a B.Tech. in Electronics & Communication (2011) from SIT Mathura, an M.Tech. in Electronics Design & Technology (2018) from NIELIT Gorakhpur with honors, and is currently pursuing a Ph.D. in RF and Microwave Engineering at IIT Roorkee (since 2019). His academic performance is consistently commendable, with a 9 CGPA in Ph.D. coursework and 8.56 CGPA in M.Tech. His research focus spans simulation and modeling of microwave filters using cutting-edge tools like HFSS, CST, ADS, and MATLAB. His doctoral thesis involves designing SIW Band Pass Filters tailored for 5G system applications. His formal education, supported by deep software expertise and rigorous project work, provides a solid foundation for innovative contributions to the electronics and communication field.

🏢 Work Experience :

Govind Kumar Mishra brings both industrial and academic experience. He began his career with Sky Voice Telecom Pvt. Ltd. in New Delhi (2011–2012), gaining practical exposure to communication systems. From 2013–2016, he engaged in academic tutoring, mentoring students for GATE and IES examinations. His current Ph.D. research at IIT Roorkee has involved extensive hands-on work with high-frequency simulations, device modeling, and real-world filter implementation. His experience includes designing both single and dual-band microwave filters using SIW technology. With a keen ability to model devices in practical conditions and synchronize various tools and methods, Govind’s professional experience is a well-rounded blend of research depth, simulation skill, and applied electronics engineering practice.

🔹 Awards and Honors

Govind Kumar Mishra is a recipient of multiple prestigious accolades. He has qualified the GATE exam in Electronics Engineering four times (2013, 2016, 2017, 2019), a testament to his strong technical foundation. He earned M.Tech. and Ph.D. scholarships supported by GATE and institutional funding. In 2008, he achieved 1st place in the Truss Busting Model Presentation competition at Hindustan College of Science & Technology, highlighting his early promise in engineering design. His consistent academic distinction, recognized through honors and merit-based fellowships, underlines his capability and dedication to advancing the field of microwave technology. These honors reflect both his theoretical knowledge and hands-on technical competence in the research and design of electronic systems.

🔬 Research Focus :

Govind Kumar Mishra’s research centers on the design, simulation, and development of microwave filters and devices using Substrate Integrated Waveguide (SIW) technology. His Ph.D. work addresses SIW Band Pass Filter development for transmitter and receiver ends in 5G systems. He leverages tools like HFSS, CST, ADS, and MATLAB for high-frequency structure simulation, performance optimization, and modeling. His work aims to reduce the size and weight of microwave devices while improving reliability and fabrication ease. He is also exploring novel dual-band and single-band filter structures suitable for modern communication demands. His interest spans electromagnetic field theory, antenna systems, and high-frequency communication technologies, contributing to the rapidly growing need for efficient spectrum utilization in IoT and wireless systems.

📊 Publication Top Notes:

📘 A Novel SIW Bandpass Filter Design by Diagonal Coupling Approach on Single and Multilayer Model
Year: 2025 | Cited by: – | 🛠️📡

📘 A Single‑Layer Dual‑Band SIW Filter on a Mixed Coupling Structure for 5G Applications
Year: 2025 | Cited by: – | 📶🚀

📘 Novel Coupling Design For Substrate Integrated Waveguide Bandpass Filter
Year: 2024 | Cited by: 2 | ✅📡

📘 Substrate Integrated Waveguide Filter Based On Inductive Post Design
Year: 2023 | Cited by: 2 | 🔧📐

📘 Design of Dual Band Substrate Integrated Waveguide Filter for Radar Application in Ku Band
Year: 2018 | Cited by: 2 | 📻🎯

📘 SIWG Filter at 17.24 GHz with RT Duroid 5880 Substrate for Wireless Applications
Year: 2018 | Cited by: 2 | 📡📶

jaehyeong lee | Electronics Engineering | Best Researcher Award

Published on by Engineering Scientist

Dr. jaehyeong lee |Electronics Engineering
| Best Researcher Award

Staff engineer at  samsung electronics, South Korea .

Jaehyeong Lee is a dedicated researcher and Staff Engineer at Samsung Electronics, specializing in DRAM BEOL reliability. With a Ph.D. in Materials Engineering, his research focuses on electromigration (EM) and time-dependent dielectric breakdown (TDDB) characteristics in BEOL processes. His work has led to significant insights into the effects of mechanical stress on BEOL TDDB, contributing to the development of a clustering model for enhanced reliability. He has published seven SCI-indexed papers and received the Excellent Poster Award at HyMaP 2017. His commitment to advancing semiconductor reliability through innovative research makes him a strong candidate for the Best Researcher Award.

🌍 Professional Profile:

Scopus 

🏆 Suitability for the Best Researcher Award

Jaehyeong Lee’s research on DRAM BEOL reliability addresses critical challenges in semiconductor manufacturing. His studies on electromigration and TDDB have contributed to improving BEOL process reliability in advanced DRAM technology. His expertise in understanding mechanical stress effects on TDDB has led to innovative approaches in clustering models. With seven SCI-indexed publications, he has demonstrated significant contributions to the field. His award-winning research (Excellent Poster Award, HyMaP 2017) and ongoing investigations into process improvements showcase his dedication. As a researcher tackling industry-relevant challenges with impactful solutions, he is well-qualified for the Best Researcher Award.

🎓 Education 

Jaehyeong Lee holds a Ph.D. in Materials Engineering, which laid the foundation for his expertise in semiconductor reliability. His doctoral research focused on DRAM BEOL reliability, particularly in electromigration (EM) and time-dependent dielectric breakdown (TDDB) mechanisms. His academic background equipped him with advanced knowledge of materials behavior under extreme scaling conditions, which he applies to his current work at Samsung Electronics. Through his rigorous academic training and specialization in BEOL reliability, he has contributed valuable insights into semiconductor technology. His education has been instrumental in his ability to develop innovative solutions that enhance the longevity and performance of DRAM products.

🏢 Work Experience 

Jaehyeong Lee is currently a Staff Engineer at Samsung Electronics, where he researches DRAM BEOL reliability. His experience includes analyzing BEOL manufacturing processes and their effects on electromigration (EM) and TDDB characteristics. He has contributed to the semiconductor industry by investigating mechanical stress factors affecting BEOL TDDB and developing a clustering model to improve reliability. With a strong research background and practical expertise in semiconductor reliability, he has played a pivotal role in addressing key challenges in DRAM technology. His seven published SCI-indexed papers reflect his commitment to advancing BEOL process understanding and reliability. His professional journey highlights his contributions to the innovation and development of high-performance memory devices.

🏅 Awards and Honors 

Jaehyeong Lee’s research excellence has been recognized with the Excellent Poster Award at HyMaP 2017, highlighting his contributions to materials engineering and semiconductor reliability. His seven SCI-indexed publications demonstrate his impact in the field of DRAM BEOL reliability. His research findings on electromigration and TDDB have gained recognition in the scientific community, influencing advancements in semiconductor process improvements. His innovative approach to clustering models for mechanical stress effects on TDDB showcases his ability to contribute groundbreaking insights. With a focus on improving semiconductor reliability, his research achievements, academic rigor, and industry contributions make him a deserving candidate for further accolades and recognition in the field.

🔬 Research Focus 

Jaehyeong Lee’s research focuses on the degradation characteristics of BEOL reliability in DRAM technology. His work addresses the impact of electromigration (EM) and time-dependent dielectric breakdown (TDDB) on BEOL process reliability. His recent studies on mechanical stress effects on BEOL TDDB aim to improve the stability and efficiency of semiconductor devices. He has also developed a clustering model to analyze and predict TDDB behavior under different manufacturing conditions. His research contributes to overcoming the challenges posed by rapid DRAM scaling. By enhancing BEOL reliability, he plays a crucial role in improving semiconductor performance and longevity, making his research valuable to the advancement of memory technologies.

📊 Publication Top Notes:

Lee, J., Jihyun, B., Woo, B., Byoung-wook, Y. M., Lee, Y. M., Ko, S., Seungbum, & Pae, S., Sangwoo. (2025). Vertical scale-down of Cu/low-k interconnect development for BEOL reliability improvement of 12nm DRAM. Microelectronics Reliability.